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Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus

US 6,524,977 B1 · Assignee: Semiconductor Energy Laboratory Co., Ltd. · Inventors: Yamazaki; Shunpei et al.

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13 drawing sheets

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Listed from its USPTO record in Patent Yard's full-term archive. Its claims, description and drawings are in the USPTO PDF and on Google Patents, and the Claude kit works from them.

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Why it's free to use

  • Filed July 24, 1996. A US utility patent lasts 20 years from filing, so its term ended July 24, 2016.
  • Patents filed before May 29, 2000 can't get a term adjustment for USPTO delays, and any other extension is capped at five years, so it can't still be in force.
  • We haven't checked its US family, and a later related patent could still be in force. We check US rights only.
FiledJuly 24, 1996
GrantedFebruary 25, 2003
Term endedJuly 24, 2016
Application number08/685752
Classification (CPC)B23K26/073 +2 more
Length30 pages

Sources & verification

Official USPTO records

Full published documentText and every drawing sheet as a PDF.USPTOFile historyStatus, office actions, notices, fee records and petitions.USPTO Patent CenterPatent Public Search recordSearchable full text and bibliographic data.USPTO

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