Expired, full termArchive
Method of producing semiconductor devices by selective laser irradiation and oxidation
US 4,292,091 A · Assignee: VLSI Technology Research Association · Inventors: Togei; Ryoiku
Overview
The published document from the USPTO: abstract, claims, description and drawings. Open it full size
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Listed from its USPTO record in Patent Yard's full-term archive. Its claims, description and drawings are in the USPTO PDF and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 25, 1980 and granted September 29, 1981. A patent filed before June 8, 1995 lasts 17 years from grant or 20 from filing, whichever is longer, so its term ended February 25, 2000.
- Any extension is capped at five years, so it can't still be in force.
- We haven't checked its US family, and a later related patent could still be in force. We check US rights only.
FiledFebruary 25, 1980
GrantedSeptember 29, 1981
Term endedFebruary 25, 2000
Application number06/124467
Classification (CPC)H10P14/2905 +2 more
Length8 pages
Timeline
Timeline From USPTO dates
Sources & verification
Official USPTO records
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Everything on this page comes from the USPTO record linked above.