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Silicide formation using a metal-organic chemical vapor deposited capping layer

US 2005/0239287 A1 · Inventors: Wang, Mei-Yun et al.

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Listed from its USPTO record in Patent Yard's full-term archive. Its claims, description and drawings are in the USPTO PDF and on Google Patents, and the Claude kit works from them.

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Why it's free to use

  • Published October 27, 2005, and no patent has issued anywhere in its US family since.
  • Nothing has been filed in its family for more than seven years, so it is very unlikely to still be pending.
  • This status is inferred from USPTO records. Confirm it on Patent Center before relying on it.
FiledDecember 18, 2003
PublishedOctober 27, 2005
StatusAbandoned (inferred)
Application number10/742202
Classification (CPC)H10D30/0212 +2 more
Length7 pages

Timeline

Timeline From USPTO dates

20042005Application filedDec 18, 2003Application publishedOct 27, 2005

Sources & verification

Official USPTO records

Full published documentText and every drawing sheet as a PDF.USPTOFile historyStatus, office actions, notices, fee records and petitions.USPTO Patent CenterPatent Public Search recordSearchable full text and bibliographic data.USPTO

Cross-check elsewhere

Google PatentsFull text, worldwide family, citing patents and legal events.patents.google.comJustia PatentsFull text, claims and classification.patents.justia.comFreePatentsOnlineFull text and PDF.freepatentsonline.comEspacenetForeign family and legal status.European Patent Office

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