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Expired European patentEurope

Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

EP 1604404 B1 · Applicant: Infineon Technologies AG

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Listed from its EPO record in Patent Yard's archive of European patents past their term. Its claims, description and drawings are in the EPO PDF and on Google Patents, and the Claude kit works from them.

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Why it's free to use

  • Filed March 19, 2003 and granted June 22, 2011. A European patent lasts at most 20 years from filing, so its term ended March 19, 2023.
  • Supplementary protection certificates extend only medicine and crop-protection patents, and it isn't classified as either.
  • We check European rights only. A US or other national patent in its family could still be in force: check its family on Espacenet or Google Patents.
FiledMarch 19, 2003
PublishedDecember 14, 2005
GrantedJune 22, 2011
Term endedMarch 19, 2023
Application numberEP 03718625
Classification (CPC)H10D62/111 +2 more

Timeline

Timeline From EPO dates

2004200620082010201220142016201820202022Application filedMarch 19, 2003PublishedDec 14, 2005Patent grantedJune 22, 2011Term endedMarch 19, 2023

Sources & verification

Official EPO records

Full published documentClaims, description and drawings as a PDF.EPOEuropean Patent RegisterProcedure, status, file inspection and legal events.EPOLinked open EP data recordThe bibliographic record this page is built from.EPO

Cross-check elsewhere

Google PatentsFull text, worldwide family, citing patents and legal events.patents.google.comEspacenetNational family members and their legal status.European Patent Office

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