European application, no grantEurope
Source/drain of MISFET in semiconductor device and method of manufacturing the same
EP 0669656 A2 · Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Overview
The published document from the EPO: abstract, claims, description and drawings. Open it full size
Read the whole patent
Listed from its EPO record in Patent Yard's archive of European patents past their term. Its claims, description and drawings are in the EPO PDF and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 24, 1995 and never granted as a European patent. Had it been granted, its 20-year term would have ended February 24, 2015.
- A supplementary protection certificate, which can extend a medicine or crop-protection patent, adds at most five and a half years, so even that would have ended by August 24, 2020.
- We check European rights only. A US or other national patent in its family could still be in force: check its family on Espacenet or Google Patents.
FiledFebruary 24, 1995
PublishedAugust 30, 1995
GrantedNever granted
Term endedFebruary 24, 2015
Application numberEP 95102676
Classification (CPC)H10D62/116 +2 more
Timeline
Timeline From EPO dates
Sources & verification
Official EPO records
Everything on this page comes from the EPO record linked above. EPO data used under CC BY 4.0.