Patent Yard Sign in
Expired European patentEurope

Manufacturing process for insulated gate field effect transistors (igfet) with low short circuit density between gate and source and devices obtained thereby

EP 0545484 B1 · Applicant: CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO

EPO PDF

Overview

The published document from the EPO: abstract, claims, description and drawings. Open it full size

Read the whole patent

Listed from its EPO record in Patent Yard's archive of European patents past their term. Its claims, description and drawings are in the EPO PDF and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Filed November 27, 1992 and granted August 13, 2003. A European patent lasts at most 20 years from filing, so its term ended November 27, 2012.
  • A supplementary protection certificate, which can extend a medicine or crop-protection patent, adds at most five and a half years, so even that would have ended by May 27, 2018.
  • We check European rights only. A US or other national patent in its family could still be in force: check its family on Espacenet or Google Patents.
FiledNovember 27, 1992
PublishedJune 9, 1993
GrantedAugust 13, 2003
Term endedNovember 27, 2012
Application numberEP 92203670
Classification (CPC)H10D30/0291 +1 more

Timeline

Timeline From EPO dates

1993199519971999200120032005200720092011Application filedNov 27, 1992PublishedJune 9, 1993Patent grantedAug 13, 2003Term endedNov 27, 2012

Sources & verification