Expired European patentEurope
Integrated semiconductor circuit with p and n channel MOS transistors
EP 0381237 B1 · Applicant: KABUSHIKI KAISHA TOSHIBA
Overview
The published document from the EPO: abstract, claims, description and drawings. Open it full size
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Listed from its EPO record in Patent Yard's archive of European patents past their term. Its claims, description and drawings are in the EPO PDF and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 2, 1990 and granted September 1, 1999. A European patent lasts at most 20 years from filing, so its term ended February 2, 2010.
- A supplementary protection certificate, which can extend a medicine or crop-protection patent, adds at most five and a half years, so even that would have ended by August 2, 2015.
- We check European rights only. A US or other national patent in its family could still be in force: check its family on Espacenet or Google Patents.
FiledFebruary 2, 1990
PublishedAugust 8, 1990
GrantedSeptember 1, 1999
Term endedFebruary 2, 2010
Application numberEP 90102104
Classification (CPC)H10D84/854
Timeline
Timeline From EPO dates
Sources & verification
Official EPO records
Everything on this page comes from the EPO record linked above. EPO data used under CC BY 4.0.