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Expired European patentEurope

MOS field-effect transistor structure with extremely flat source/drain regions and silicides connection regions, and method of manufacturing these within an intergrated circuit

EP 0268941 B1 · Applicant: SIEMENS AKTIENGESELLSCHAFT

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Overview

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Listed from its EPO record in Patent Yard's archive of European patents past their term. Its claims, description and drawings are in the EPO PDF and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Filed November 11, 1987 and granted April 15, 1992. A European patent lasts at most 20 years from filing, so its term ended November 11, 2007.
  • A supplementary protection certificate, which can extend a medicine or crop-protection patent, adds at most five and a half years, so even that would have ended by May 11, 2013.
  • We check European rights only. A US or other national patent in its family could still be in force: check its family on Espacenet or Google Patents.
FiledNovember 11, 1987
PublishedJune 1, 1988
GrantedApril 15, 1992
Term endedNovember 11, 2007
Application numberEP 87116679
Classification (CPC)H10D30/63 +2 more

Timeline

Timeline From EPO dates

1988199019921994199619982000200220042006Application filedNov 11, 1987PublishedJune 1, 1988Patent grantedApril 15, 1992Term endedNov 11, 2007

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