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Expired European patentEurope

Method of producing a GaAs JFET with self-aligned p-type gate

EP 0158752 B1 · Applicant: KABUSHIKI KAISHA TOSHIBA

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Overview

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Listed from its EPO record in Patent Yard's archive of European patents past their term. Its claims, description and drawings are in the EPO PDF and on Google Patents, and the Claude kit works from them.

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Why it's free to use

  • Filed December 31, 1984 and granted February 28, 1990. A European patent lasts at most 20 years from filing, so its term ended December 31, 2004.
  • A supplementary protection certificate, which can extend a medicine or crop-protection patent, adds at most five and a half years, so even that would have ended by July 1, 2010.
  • We check European rights only. A US or other national patent in its family could still be in force: check its family on Espacenet or Google Patents.
FiledDecember 31, 1984
PublishedOctober 23, 1985
GrantedFebruary 28, 1990
Term endedDecember 31, 2004
Application numberEP 84309167
Classification (CPC)H10D64/62 +1 more

Timeline

Timeline From EPO dates

1985198719891991199319951997199920012003Application filedDec 31, 1984PublishedOct 23, 1985Patent grantedFeb 28, 1990Term endedDec 31, 2004

Sources & verification

Official EPO records

Full published documentClaims, description and drawings as a PDF.EPOEuropean Patent RegisterProcedure, status, file inspection and legal events.EPOLinked open EP data recordThe bibliographic record this page is built from.EPO

Cross-check elsewhere

Google PatentsFull text, worldwide family, citing patents and legal events.patents.google.comEspacenetNational family members and their legal status.European Patent Office

Everything on this page comes from the EPO record linked above. EPO data used under CC BY 4.0.