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Semiconductor device having a conductive layer consisting of a high-melting point metal silicide and a method for manufacturing such a semiconductor device

EP 0100454 B1 · Applicant: KABUSHIKI KAISHA TOSHIBA

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Overview

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Listed from its EPO record in Patent Yard's archive of European patents past their term. Its claims, description and drawings are in the EPO PDF and on Google Patents, and the Claude kit works from them.

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Why it's free to use

  • Filed July 5, 1983 and granted September 30, 1987. A European patent lasts at most 20 years from filing, so its term ended July 5, 2003.
  • A supplementary protection certificate, which can extend a medicine or crop-protection patent, adds at most five and a half years, so even that would have ended by January 5, 2009.
  • We check European rights only. A US or other national patent in its family could still be in force: check its family on Espacenet or Google Patents.
FiledJuly 5, 1983
PublishedFebruary 15, 1984
GrantedSeptember 30, 1987
Term endedJuly 5, 2003
Application numberEP 83106554
Classification (CPC)H10D30/60 +2 more

Timeline

Timeline From EPO dates

1984198619881990199219941996199820002002Application filedJuly 5, 1983PublishedFeb 15, 1984Patent grantedSep 30, 1987Term endedJuly 5, 2003

Sources & verification

Official EPO records

Full published documentClaims, description and drawings as a PDF.EPOEuropean Patent RegisterProcedure, status, file inspection and legal events.EPOLinked open EP data recordThe bibliographic record this page is built from.EPO

Cross-check elsewhere

Google PatentsFull text, worldwide family, citing patents and legal events.patents.google.comEspacenetNational family members and their legal status.European Patent Office

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