Expired European patentEurope
Method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate
EP 0084635 B1 · Applicant: International Business Machines Corporation
Overview
The published document from the EPO: abstract, claims, description and drawings. Open it full size
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Listed from its EPO record in Patent Yard's archive of European patents past their term. Its claims, description and drawings are in the EPO PDF and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed December 7, 1982 and granted September 27, 1989. A European patent lasts at most 20 years from filing, so its term ended December 7, 2002.
- A supplementary protection certificate, which can extend a medicine or crop-protection patent, adds at most five and a half years, so even that would have ended by June 7, 2008.
- We check European rights only. A US or other national patent in its family could still be in force: check its family on Espacenet or Google Patents.
FiledDecember 7, 1982
PublishedAugust 3, 1983
GrantedSeptember 27, 1989
Term endedDecember 7, 2002
Application numberEP 82111305
Classification (CPC)H10P50/283 +2 more
Timeline
Timeline From EPO dates
Sources & verification
Official EPO records
Everything on this page comes from the EPO record linked above. EPO data used under CC BY 4.0.