Method for forming very narrow doping regions in a semiconductor body and use of this method for producing semiconductor regions insulated from each other, bipolar semiconductor devices, integrated injection logics and double-diffused FET semiconductor devices

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Listed from its EPO record in Patent Yard's archive of European patents past their term. Its claims, description and drawings are in the EPO PDF and on Google Patents, and the Claude kit works from them.

Why it's free to use

• Filed October 3, 1979 and granted October 13, 1982. A European patent lasts at most 20 years from filing, so its term ended October 3, 1999.
• A supplementary protection certificate, which can extend a medicine or crop-protection patent, adds at most five and a half years, so even that would have ended by April 3, 2005.
• We check European rights only. A US or other national patent in its family could still be in force: check its family on Espacenet or Google Patents.