Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making

Abstract From the Canadian patent

The present invention relates to an integration of two lateral JFETs. In one aspect there is provided a monolithic integrated circuit with a substrate having a buffer layer of a p-type semiconductor material. First and second discrete channel regions of an n-type semiconductor material are on the buffer layer. A source region is also on the buffer layer adjacent to and in electrical communication with the first channel region. A source/drain region on the buffer layer between the first and second channel region overlaps a shoulder portion of the second channel region. A drain region on the shoulder of the second channel region does not directly contact the buffer layer. First and second …