Lateral junction field effect transistor and method of manufacturing the same
CA 2708358 A1 · Owner: Matsunami, Hiroyuki · Inventors: Hatsukawa, Satoshi; Fujikawa, Kazuhiro; Kimoto, Tsunenobu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A lateral junction field effect transistor includes a first gate electrode layer (18A) arranged in a third semiconductor layer (13) between source/drain region layers (6, 8), having a lower surface extending on the second semiconductor layer (12), and doped with p-type impurities more heavily than the second semiconductor layer (12) and a second gate, electrode layer (18B) arranged in a fifth semiconductor layer (15) between the source/drain region layers (6, 8), having a lower surface extending on a fourth semiconductor layer (14), having substantially the same concentration of p-type impurities as the first gate electrode layer (18A) and having the same potential as the first gate …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed December 2, 2002. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended December 2, 2022.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by December 2, 2024.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.