Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source
CA 2671386 A1 · Owner: Ltrim Technologies Inc. · Inventors: Savaria, Yvon; Meunier, Michel; Gagnon, Yves
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The invention relates to a method of iteratively selectively tuning the , impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration , by controlled diffusion of dopants from one or more adjacent regions of higher dopant , concentration through the melting action of a focussed heating source for , example a laser. In , particular the method is directed to increasing the dopant concentration of the region of lower , dopant concentration but may also be adapted to decrease the dopant concentration of the region.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed July 16, 1999. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended July 16, 2019.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by July 16, 2021.
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.