Gan substrate, method of growing gan and method of producing gan substrate

Abstract From the Canadian patent

A low dislocation density GaN single crystal substrate is made by forming a seed , mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing , a GaN crystal on a facet-growth condition forming repetitions of parallel , facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing , voluminous defect accumulating regions (H) accompanying the valleys yielding , low , dislocation single crystal regions (Z) following the facets making C-plane , growth regions (Y) , following flat tops between the facets gathering dislocations on the facets , into the valleys by the action of the growing facets, …