System and process for high-density,low-energy plasma enhanced vapor phase epitaxy

Abstract From the Canadian patent

An apparatus and process for fast epitaxial deposition of compound semiconductor layers includes a low-energy high-density plasma generating , apparatus for plasma enhanced vapor phase epitaxy. The process provides in one step, combining one or more metal vapors with gases of non-metallic elements in a deposition chamber. Then highly activating the gases in the presence of a dense, low-energy plasma. Concurrently reacting the metal vapor with the highly activated gases and depositing the reaction product on a heated substrate in communication with a support immersed in the plasma to form a , semiconductor layer on the substrate. The process is carbon-free and especially suited for …