Iii/v semiconductor
CA 2594947 C · Owner: Stolz, Wolfgang · Inventors: Volz, Kerstin; Stolz, Wolfgang; Koch, Joerg
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition Ga x In y N a As b P c Sb d wherein , x = 70 - 100 mole-%, y = 0 - 30 mole-% a = 0.5 , - 15 mole-%, b = 67.5 - 99.5 mole-% c = 0 -32.0 mole-% , and d = 0 - 15 mole-% wherein the , total of x and y is always 100 mole-% wherein , the total of a, b, c and d is always 100 mole-% and wherein the ratio of the totals of x and y on the one hand and of a to d on the other hand is substantially 1:1, to methods for the production thereof, new semiconductors the use , thereof for the …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed January 26, 2006 and granted November 24, 2015. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended January 26, 2026.
- Certificates of supplementary protection extend only drug patents, and it isn't classified as one.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.