Contact doping and annealing systems and processes for nanowire thin films
CA 2585009 C · Owner: Nanosys, Inc. · Inventors: Stumbo, David P.; Pan, Yaoling
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments a plasma ion immersion , implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm2 (e.g. less than about 50 mJ/cm2 e.g. between about 2 and 18 mJ/cm2) is used to anneal nanowire and other nanoelement-based devices on substrates such as low temperature flexible , substrates e.g. plastic substrates.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 10, 2005 and granted September 30, 2014. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended November 10, 2025.
- Certificates of supplementary protection extend only drug patents, and it isn't classified as one.
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