Surface reconstruction method for silicon carbide substrate
CA 2583683 C · Owner: Masuda, Takeyoshi · Inventors: Masuda, Takeyoshi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A surface reconstruction method for a silicon carbide substrate (1) includes a silicon film forming step of forming a silicon film (2) on a surface of the silicon carbide , substrate (1) and a heat treatment step of heat-treating the silicon carbide substrate (1) , and the silicon film (2) without providing a polycrystalline silicon carbide substrate on a , surface of the silicon film (2). Here after the heat treatment step, a , silicon film removal step of removing the silicon film (2) may be included. Further a , silicon oxide , film forming step of oxidizing the silicon film (2) after the heat treatment step to , generate a silicon oxide film and a silicon oxide film removal step …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 2, 2006 and granted March 27, 2012. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended March 2, 2026.
- Certificates of supplementary protection extend only drug patents, and it isn't classified as one.
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