Process for the production of gan or aigan crystals
CA 2583592 C · Owner: Dadgar, Armin · Inventors: Dadgar, Armin; Krost, Alois
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The invention concerns a process and an apparatus for the production of gallium nitride or gallium aluminium nitride single crystals. It is essential for the process implementation according to the invention that the vaporisation of gallium or gallium and aluminium is effected at a temperature above the temperature of the growing crystal but at least at 1000°C and that a gas flow comprising nitrogen gas hydrogen gas, inert , gas or a combination of said gases is passed over the surface of the metal melt in such a way that the gas flow over the surface of the metal melt prevents contact of the nitrogen precursor with the metal melt.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 17, 2005 and granted March 12, 2013. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended October 17, 2025.
- Certificates of supplementary protection extend only drug patents, and it isn't classified as one.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.