Nitride semiconductor light emitting device and fabrication method thereof
CA 2577917 C · Owner: Lg Innotek Co. Ltd. · Inventors: Lee, Suk Hun
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A nitride semiconductor light emitting device includes a first nitride semiconductor layer, a first Al-doped nitride semiconductor buffer layer formed on the first nitride semiconductor layer an activation layer formed on , the first Al-doped nitride semiconductor buffer layer and a second nitride , semiconductor layer formed on the activation layer. Another nitride semiconductor light emitting device includes a first nitride semiconductor layer, an activation layer formed on the first nitride semiconductor layer a , second Al-doped nitride semiconductor buffer layer formed on the activation layer, and a second nitride semiconductor layer formed on the second Al-doped nitride …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed August 19, 2005 and granted August 5, 2014. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended August 19, 2025.
- Certificates of supplementary protection extend only drug patents, and it isn't classified as one.
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Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.