Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer
CA 2540245 C · Owner: Centre National De La Recherche Scientifique (Cnrs) · Inventors: Feltin, Eric Pascal; Bougrioua, Zahia; Nataf, Gilles
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The invention relates to a method for the production of self-supporting substrates comprising element III nitrides. More specifically the invention relates to a method of producing a self-supporting substrate comprising a III-nitride in particular, gallium nitride (GaN), which is obtained by means of epitaxy using a starting substrate. The invention is characterised in that it consists in depositing a single-crystal silicon-based intermediary layer by way of a sacrificial layer which is intended to be spontaneously vaporised during the III-nitride epitaxy step. The inventive method can be used for example, to produce a flat, self-supporting III-nitride layer having a diameter greater than …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 24, 2004 and granted February 14, 2012. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended September 24, 2024.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 24, 2026.
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