High-speed silicon-based electro-optic modulator

Abstract From the Canadian patent

A silicon-based electro-optic modulator (30) is based on forming a gate region of a first conductivity to partially overly a body region of a second conductivity type, with a relatively thin dielectric layer (10) interposed between the contiguous portions of the gate and body regions (12 10). The , modulator may be formed on an SOI platform with the body region formed in the , relatively thin silicon surface layer of the SOI structure and the gate region formed of a relatively thin silicon layer (10) overlying the SOI structure. The doping in the gate and body regions is controlled to form lightly doped regions above and below the dielectric thus defining the active region (16) , of …