Nitrogen passivation of interface states in sio2/sic structures
CA 2495530 A1 · Owner: Cree, Inc. · Inventors: Saxler, Adam William; Das, Mrinal Kanti
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A nitrided oxide layer on a silicon carbide layer is processed by annealing the nitrided oxide layer in a substantially oxygen-free nitrogen containing ambient. The anneal may be carried out at a temperature of greater than about 900 ~C, for example, a temperature of about 1100 ~C a temperature of about , 1200 ~C or a temperature of about 1300 ~C. Annealing the nitrided oxide layer may be carried out at a pressure of less than about 1 atmosphere for example, at a pressure of from about 0.01 to about 1 atm or in particular, at a , pressure of about 0.2 atm. The nitrided oxide layer may be an oxide layer that is grown in a N2O and/or NO containing ambient that is annealed in a N2O , …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed August 25, 2003. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended August 25, 2023.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by August 25, 2025.
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.