A method for making a ferroelectric memory cell in a ferroelectric memory device, and a ferroelectric memory device
CA 2488829 A1 · Owner: Thin Film Electronics Asa · Inventors: Edvardsson, Niclas; Carlsson, Johan; Gustafsson, Goeran
Overview
Its claims, description and drawings are in the Canadian Patents Database.
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In a method for making ferroelectric memory cells in a ferroelectric memory device a first electrode comprising at least one metal layer and optionally at least one metal oxide layer is formed on a silicon substrate which has an optional insulating layer of silicon dioxide. A ferroelectric layer consisting of a thin film of ferroelectric polymer is formed on the top of the first electrode layer and at least a second electrode comprising at least one metal layer and at least one metal oxide layer is formed on the ferroelectric layer. The second electrode is deposited by thermal evaporation of a high-purity evaporation source from an effusion cell onto the ferroelectric layer in a …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 16, 2003. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended June 16, 2023.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 16, 2025.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.