Charge controlled avalanche photodiode and method of making the same
CA 2473223 A1 · Owner: Ko, Cheng C. · Inventors: Ko, Cheng C.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The present invention includes an epitaxial structure (16) grown on a semiinsulating InP substrate (12). First, a buffer layer (14) is grown to isolate defects originated from substrates (12). Then an n-type layer (18) is grown to serve as n-contact layer to collect electrons. Next a multiplication layer , (20) is grown to provide avalanche gain for the APD device (10). Following that, an ultra-thin charge control layer (22) is grown with carbon doping. An absorption layer (24) is grown to serve as the region for creating electronhole pairs due to a photo-excitation. Finally a p-type layer (28) is , grown to serve as p-contact layer to collect holes.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 3, 2003. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended February 3, 2023.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 3, 2025.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.