Lateral short-channel dmos, method of manufacturing the same, and semiconductor device
CA 2458992 A1 · Owner: Shindengen Electric Manufacturing Co. Ltd. · Inventors: Kitaguchi, Makoto
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A lateral short-channel DMOS 10A according to the present invention includes an N --type epitaxial layer 110 formed on a surface of a P --type semiconductor, substrate 108, a P-type well 114 that is formed in a surface of the N --type epitaxial layer, 110 and includes a channel forming region C an N +-type source region 116 , formed in a surface of the P-type well 114, an ON resistance lowering N-type well 134 formed in, a surface of the N --type epitaxial layer 110 so as to not contact the P-type well 114, an, N +-type drain region 118 formed in a surface of the ON resistance lowering Ntype well, 134, a polysilicon gate electrode 122 formed via a gate insulating film 120 in at least …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 18, 2003. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended September 18, 2023.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 18, 2025.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.