Nitride semiconductor device
CA 2458134 C · Owner: Nichia Corporation · Inventors: Yoneda, Akinori; Sugimoto, Yasunobu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A nitride semiconductor device includes a semiconductor layer a first electrode for establishing an ohmic contact disposed on the semiconductor layer and a second electrode on the first electrode having a different shape from that of the first electrode. A join region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 19, 2004 and granted January 27, 2015. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended February 19, 2024.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 19, 2026.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.