Silicon carbide metal-oxide semiconductor field effect transistors and fabicating methods therefor
CA 2457919 C · Owner: Singh, Ranbir · Inventors: Agarwal, Anant; Das, Mrinal Kanti; Palmour, John W.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) and methods of fabricating silicon carbide MOSFETs are provided. The silicon carbide MOSFETs have an n-type silicon carbide drift layer spaced apart p-, type silicon carbide regions in the n-type silicon carbide drift layer and having n-type silicon carbide regions therein and a nitrided oxide layer. The , MOSFETs also have n-type shorting channels extending from respective ones of the n-type silicon carbide regions through the p-type silicon carbide regions to the n-type silicon carbide drift layer. In further embodiments silicon , carbide MOSFETs and methods of fabricating silicon carbide MOSFETs are …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 28, 2001 and granted January 6, 2015. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended September 28, 2021.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 28, 2023.
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