Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same
CA 2453318 C · Owner: Cree, Inc. · Inventors: Smith, Richard Peter
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
High electron mobility transistors (HEMTs) and methods of fabricating HEMTs are provided Devices according to embodiments of the present invention include a gallium nitride (GaN) channel layer and an aluminum gallium nitride (AlGaN) barrier layer on the channel layer. A first ohmic contact is provided on the barrier layer (16) to provide a source electrode (18) and a second ohmic contact is also provided on the barrier layer (16) and is spaced apart from the source electrode (18) to provide a drain electrode (20). A GaN-based cap segment (30) is provided on the barrier layer (16) between the source electrode (18) and the drain electrode (20). The GaN-based cap segment (30) has a …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 26, 2002 and granted June 10, 2014. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended March 26, 2022.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 26, 2024.
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