Semiconductor device and method of manufacturing the same
CA 2451887 A1 · Owner: Akahori, Hiroshi · Inventors: Sugawa, Shigetoshi; Nii, Keiichi; Teramoto, Akinobu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation the silicon surface is flattened , so, that an arithmetical mean deviation of surface R a is not greater than 0.15nm, preferably, 0.09nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed December 2, 2003. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended December 2, 2023.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by December 2, 2025.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.