Semiconductor radiation detecting element
CA 2447403 C · Owner: Kyan, Atsushi · Inventors: Murakami, Masaki; Ohno, Ryoichi; Moriyama, Miki
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A Schottky barrier type radiation detecting element having a compound InxCdyTez comprising indium and cadmium as means for applying a voltage to a , compound semiconductor crystal principally comprising cadmium and tellurium on one side of the compound semiconductor crystal. Percentage z of tellurium content in the compound InxCdyTezis preferably in the range of 42.9%-50% expressed in terms of the ratio of the number of atoms and percentage y of cadmium content in the compound InxCdyTezis preferably in the range of 0%-10% expressed in terms of the ratio of the number of atoms.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 11, 2002 and granted September 4, 2012. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 11, 2022.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 11, 2024.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.