Gallium nitride semiconductor device
CA 2444273 C · Owner: Nichia Corporation · Inventors: Kawagoe, Kimihiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The present invention provides in a gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer made of a p-type gallium nitride semiconductor that includes A1 and is doped with p-type impurity a first cap layer, made of a gallium nitride semiconductor that includes n-type impurity of lower concentration than that of said active layer and p-type impurity of lower concentration than that of said p-type cladding layer, and a second cap layer made of a p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity are stacked one …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 8, 2002 and granted May 22, 2012. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 8, 2022.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 8, 2024.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.