Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
CA 2442575 C · Owner: Van De Sanden, Mauritius Cornelius Maria · Inventors: Smets, Arno Hendrikus Marie; Hamers, Edward Aloys Gerard; Van De Sanden, Mauritius Cornelius Maria
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch noncrystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 12, 2002 and granted July 19, 2011. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 12, 2022.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 12, 2024.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.