Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same
CA 2441877 A1 · Owner: Xu, Ke · Inventors: Yoshikawa, Akihiko; Xu, Ke
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The object of the invention is to provide a semiconductor device having a nitride-based hetero-structure in which an epitaxial nitride film has a uniformly flat, surface at a single molecule level and a method of easily fabricating such a device. The object of the invention is achieved by providing a semiconductor device comprising a sapphire substrate whose c-surface is modified to be nitridesurfaced, GaN buffer layer, N polarity GaN layer N polarity AlN layer, N polarity , InN/InGaN multi-layered device structure, Al polarity AlN layer and GaN cap layer. ,
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 22, 2003. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended September 22, 2023.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 22, 2025.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.