Atmospheric pressure plasma etching reactor
CA 2440328 A1 · Owner: Henins, Ivars · Inventors: Snyder, Hans; Selwyn, Gary S.; Henins, Ivars
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An atmospheric pressure plasma etching reactor (10) has a table (11) holding a wafer (12) to be processed and which moves the wafer to be processed under at least one electrode (14) that is mounted in close proximity to the table (11) and defines an entry (18) of a gas mixture. With a radio-frequency voltage connected between the table (11) and the at least one electrode (14) a plasma , is created between the at least one electrode (14) and the wafer (12) to be processed while the wafer (12) to be processed moves under the at least one electrode (14) by the table (11).
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 12, 2002. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended March 12, 2022.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 12, 2024.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.