Method for modifying the impedance of semiconductor devices using a focused heating source
CA 2436759 C · Owner: Technologies Ltrim Inc. · Inventors: Langlois, Hugues; Gagnon, Yves; Lacourse, Alain
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method is provided for tuning (i.e. modifying changing) the impedance of , semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or , devices, by modifying the dopant profile of a region of low dopant concentration (i.e. , increasing the dopant concentration) by diffusion of dopants from adjacent regions of , higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of , lasers in relation to circuits for the creation of conductive links and pathways where , none existed …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed August 8, 2003 and granted December 3, 2013. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended August 8, 2023.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by August 8, 2025.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.