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Canadian application, no grantCanada

Method for fabricating siliconized silicon carbide parts

CA 2429960 A1 · Owner: Wang, Hong Yun · Inventors: Wang, Hong Yun; Park, Seok-Min; Bourell, David L.

CIPO record

Overview

Drawings and full text

Its claims, description and drawings are in the Canadian Patents Database.

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Abstract From the Canadian patent

The present invention includes a method for fabricating Si/SiC parts for use in the microelectronics manufacturing industry. The method includes providing a SiC powder. The method also includes providing a polymer binder and mixing the SiC powder and the polymer binder to form a part using an SLS process.

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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Filed November 27, 2001. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended November 27, 2021.
  • A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 27, 2023.
  • We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledNovember 27, 2001
GrantedNo grant recorded
Term endedNovember 27, 2021
Patent numberCA 2429960 A1
Classification (IPC)C04B35/57 +2 more

Timeline

Timeline From CIPO dates

2002200420062008201020122014201620182020Application filedNov 27, 2001Term endedNov 27, 2021

Sources & verification

Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.