Semiconductor structure and method for processing such a structure
CA 2425289 A1 · Owner: Colson, Paul Frans Marie · Inventors: Tack, Marnix Roger Anna; Moens, Peter Dominique Willem; De Backer, Eddy
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for processing a low ohmic contact structure to a buried conductive layer in or below a device layer forming part of a semiconductor component is presented, whereby first a highly doped region within said device layer reaching said buried conductive layer is realised this being, followed by a step of etching a trench through said highly doped region to a final depth which extends at least to the semiconductor substrate underneath said buried conductive layer. In a variant method this trench is first preetched, until a predetermined depth, before the highly doped region is provided. A semiconductor structure which is realised by these methods is described as well.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 10, 2003. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended April 10, 2023.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 10, 2025.
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Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.