Method for manufacturing high efficiency photovoltaic devices at enhanced deposition rates
CA 2409265 C · Owner: Guha, Subhendu · Inventors: Yang, Chi C.; Lord, Kenneth; Guha, Subhendu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A P-I-N type photovoltaic device is manufactured by a process wherein the deposition rate of the intrinsic layer is controlled so that a portion of the intrinsic layer (12a) which is closest to the interface between the intrinsic layer and P doped layer (14), which comprises at least 10% of the thickness of the intrinsic layer, is deposited at a rate which is less than the average rate at which the intrinsic layer is deposited.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed May 16, 2001 and granted March 20, 2012. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended May 16, 2021.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by May 16, 2023.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.