Charge carrier extracting transistor
CA 2406642 C · Owner: Qinetiq Limited · Inventors: Phillips, Timothy Jonathan
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An extracting transistor (10) - an FET - includes a conducting channel extending via a p-type InSb quantum well (22) between p-type InA1Sb layers (20, 24) of wider band-gap. One of the InA1Sb layers (24) incorporates an ultra-thin n-type .delta.-doping layer (28) of Si which provides a dominant , source of charge carriers for the quantum well (22). It bears n+ source and drain electrodes (30a, 30b) and an insulated gate (30c). The other InA1Sb layer (20) adjoins a barrier layer (19) of still wider band-gap upon a substrate layer (14) and substrate (16) with electrode (18). Biasing one or both of the source and drain electrodes (30a 30b) positive relative to the , substrate electrode …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed May 2, 2001 and granted December 18, 2012. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended May 2, 2021.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by May 2, 2023.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.