Mis hydrogen sensors
CA 2402776 A1 · Owner: Auner, Gregory W. · Inventors: Naik, Ratna; Serina, Flaminia; Auner, Gregory W.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AIN) as the "insulator" in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen such , as palladium, on a semiconductor substrate. The AIN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate the electrical , behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AIN/Si and Pd/AIN/SiC wherein …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 16, 2001. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended March 16, 2021.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 16, 2023.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.