Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon

Abstract From the Canadian patent

A process for controllably forming silicon nanostructures such as a silicon quantum wire array. A silicon surface is sputtered by a uniform flow of nitrogen molecular ions in an ultrahigh vacuum so as to form a periodic wavelike relief in which the throughs of said relief are level with the siliconinsulator border of the SOI material. The ion energy the ion incidence angle , to the surface of said material the temperature of the silicon layer, the formation depth of the wave-like relief the height of said wave-like relief , and the ion penetration range into silicon are all determined on the basis of a selected wavelength of the wave-like relief in the range of 9 nm to 120 nm. A …