Method of forming smooth morphologies in inp-based semiconductors
CA 2386133 A1 · Owner: Nanovation Technologies, Inc. · Inventors: Youtsey, Christopher T.; Pierson, Thomas E.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor dry etching process that provides deep smooth (RMS of less , than approximately 5 mm) and vertical etching of InP-based materials with ICP RIE using a chlorinated plasma with the addition of hydrogen gas. Inert gases such as nitrogen, argon, or both may also be included. To produce relatively high anisotropy with exceptionally smooth surfaces the amount of hydrogen gas , added preferably exceeds the volumetric measure of chlorinated gas in standard cubic centimeter per minute (sccm); at a radio of greater than 1:1. The present invention provides an improved dry etching process for InP-based semiconductor materials that yields deep vertical etch profiles with improved , …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 28, 2000. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended September 28, 2020.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 28, 2022.
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Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.