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Canadian application, no grantCanada

Method of etching ferroelectric material

CA 2385532 A1 · Owner: Lucent Technologies Inc. · Inventors: Gill, Douglas M.; Jacobson, Dale Conrad

CIPO record

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Its claims, description and drawings are in the Canadian Patents Database.

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Abstract From the Canadian patent

A method of etching a ferrolectric material is disclosed whereby a single layer of ions is implanted into a surface of the film and then without, first annealing the substrate the material between that surface and the layer of ion implantation is etched away. Such a method has the benefit of being faster and much less costly as compared to prior art methods. A single ion implantation of sufficient energy causes a high level of electronic damage near the surface of the material and a high level of crystalline damage at the ion implant level. While it is well known that crystalline damage greatly increases the etch rate of a ferroelectric material the inventors have, discovered that the …

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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Filed May 8, 2002. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended May 8, 2022.
  • A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by May 8, 2024.
  • We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledMay 8, 2002
GrantedNo grant recorded
Term endedMay 8, 2022
Patent numberCA 2385532 A1
Classification (IPC)C23F1/02 +2 more

Timeline

Timeline From CIPO dates

2003200520072009201120132015201720192021Application filedMay 8, 2002Term endedMay 8, 2022

Sources & verification

Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.