High density non-volatile memory device

Abstract From the Canadian patent

This invention provides novel high density memory devices (Fig. 3) that are electrically addressable permitting , effective reading and writing that provide a high memory density (102) that , provide a high degree of fault tolerance and that are , amenable to efficient chenical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant and support , destructive or non-destructive read cycles. In a preferred embodiment the , device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or …