Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element
CA 2371361 A1 · Owner: Steckl, Andrew J. · Inventors: Birkhahn, Ronald H.; Chao, Liang-Chiun; Steckl, Andrew J.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN InN, AIN, BN or , alloys thereof doped with a lanthanide element such as Er Pr or Tm. The light , emission can be enhanced by annealing the WBGS.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 17, 2000. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended April 17, 2020.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 17, 2022.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.