Semiconductor laser device
CA 2370706 A1 · Owner: Kasukawa, Akihiko · Inventors: Funabashi, Masaki; Yatsu, Ryosuke; Kasukawa, Akihiko
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A DFB laser (10) which is of a buried hetero type having an oscillation wavelength of 1550 nm, and which is provided with a laminated layer consisting of, all formed on an InP substrate (12) an InP buffer layer (14), an active , layer (16) an InP spacer layer (18) having a film thickness of 200 nm a , diffraction grating (20) consisting of a GaInAsP layer having a film thickness of 20 nm, and a diffraction grating-buried InP first clad layer (22). The peak wavelength .lambda.max of the optical gain distribution of the active layer is about 1530 nm, and the band gap wavelength of the diffraction grating is about 1510 nm. The laminated layer is etched to a mesa stripe with p-n isolating …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 28, 2001. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended February 28, 2021.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 28, 2023.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.