A semiconductor photodiode and an optical receiver
CA 2361311 A1 · Owner: Sumitomo Electric Industries, Ltd. · Inventors: Kuhara, Yoshiki; Iguchi, Yasuhiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The present invention relates to a high-sensitivity top-electrode and bottomilluminated type photodiode. The device consists of a highly doped buffer layer, a photo-detecting layer on a semi-insulating substrate. An electrode is formed on the conductive domain that is formed in the photo-detecting layer and, another electrode is formed on the partly exposed peripheral area of the highly-doped buffer layer by removing a part of the photo-detecting layer. As the semi-insulating substrate absorbs less light in the substrate a decrease , of, sensitivity by the substrate absorption can be prevented.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 7, 2001. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended November 7, 2021.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 7, 2023.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.